Computation Modeling of Epitaxial Deposition of Tungsten Thin Films

A. S. Bhattacharyya, Sweta Prabha, Vidya S. Kujur, P. Bharadwaj, R. Praveen Kumar

Abstract


A modeling has been done on the epitaxial thin film growth of W with sputtering process. The parameters during sputtering like Ar ion energy, sticking coefficient, sputtering yield, pressure, temperature, current density, deposition were related and an attempt has been made to analyze the sputtering process. 


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