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The new & accurate techniques developed to analyze the device behaviour under various biasing and different temperature variations- Review

Mugdha Kalyan, vikas Sharma

Abstract


This paper covers the fundamentals of SDGFETs and ADGFETs. Drain modern fashions for unmarried gate MOSFETs, SDGFETs and ADGFETs are reviewed. Within the Double gate MOS era the dominating quantum mechanical outcomes which needs to be considered in dimensional modeling are also discussed. The comparisons of drain current models for Symmetric and choppy Double gate MOSFETs are performed and proven with the effects like boundaries of the models. A quick summary of the assessment paintings is furnished. The result shows a more call for within the area of uneven Double gate modeling which may be prolonged for circuits like SRAM and RF amplifier format. The top of the line quantum mechanical results which have to be blanketed in model improvement for underneath 22nm devices are indexed.


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