2D Potential Analysis in Buried Oxide Layer of Nanoscale SOI MOSFET

Abstract

Proper incorporation of short channel effects in nanoscale SOI MOSFET modeling demands total two dimensional potential analysis through out the device as the field is truly two-dimensional (2D) in nature. 2D potential profile in the channel, based on Poisson’s equation solution, have been extensively studied but similar in-depth analysis in the buried oxide layer is yet to be carried out. Miniaturization of device dimension makes 2D potential analysis in the buried layer indispensable as fringing field and substrate bias effect have huge impact on device performance, especially in nano regime. In this work, an analytical model of 2D potential profile in the buried oxide layer of SOI MOSFET has been developed by solving 2D Poisson’s equation.