Modeling and TCAD Simulation for Sio2/High-K Stacked Gate-Oxide Double Gate TFET

Abstract

This presents a two D analytical model for the surface potential, field and drain current for SiO2/High-k stacked gate compound double gate tunnel field impact semiconductor unit. Parabolic approximation technique uses two dimensional Poisson’s equation which has been resolved to get surface potential and any used to derive the electrical field of the device. Kane’s model is employed to judge the drain current of the device. Drain current, Surface potential model are studied with impact to the varied device parameters victimisation MATLAB. The planned results are in glorious agreement with the TCAD simulation results and having higher performance in tiny dimensions.