Simulation Study of Double Gate FinFETs using Different High-K

Abstract

A 2-Dimensional (2D) FinFET simulation is presented in this study.The simulation studies are conducted based on electrical parameters such as surface potential, electric field, transfer characteristics, threshold voltage and sub threshold swing using nanohubmultiple gate field effect transistors(MUGFET) simulator. These characterization studies are performed to investigate the performance of FinFETs based on different channel width and show a better performance for lower channel width withthreshold voltage shift of 0.2 V.Further, the transfer characteristics for the device are compared with silicon dioxide and titanium oxide, as oxide material for different drain biases. Findings have shown that the device with titanium oxide as dielectric material performs better compared to silicon dioxide counterpart, where the on-statecurrent increased with decreased off current.